THERMAL FIELD SIMULATION IN POWERFUL InAlAs/InGaAs FIELD-EFFECT TRANSISTORS IN THE 0.1-0.3 THz RANGE |
| 5 | |
| 2011 |
| scientific article | 621.382.33 | ||
| 348-353 | heterostructure transistor, thermal fields, analytical transistor model |
| An analytical model for simulating electric and thermal parameters of field-effect transistors including high-electron-mobility transistors (HEMTs) has been proposed. Thermal fields in an InAlAs/InGaAs powerful multi-section field-effect transistor have been calculated. The results of model calculations are compared with three-dimensional numerical ones, the error of the proposed analytical formula not exceeding 15 %. |
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