THE INFLUENCE OF DEFECTS ON MECHANICAL PROPERTIES OF EPITAXIAL SILICON LAYERS ON SAPPHIRE |
| 3 | |
| 2012 |
| SOLID-STATE PHYSICS |
| scientific article | 539.533, 537.533.35 | ||
| 30-33 | silicon on sapphire (SOS), atomic force microscopy (AFM), transmission electron microscopy (TEM) |
| Silicon layers grown on sapphire substrates by molecular beam epitaxy at a lower temperature (600 ?С) are investigated.
The defect distribution over the silicon layer depth is studied using transmission electron microscopy.
The possibility to determine the quality of growing silicon-on-sapphire layers by the Z-modulation mode of AFM
has been shown. |
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