CONTRIBUTION OF HYPERFINE INTERACTION TO THE PROCESSES OF SPIN RELAXATION OF CONDUCTION ELECTRONS IN SILICON |
| 3 | |
| 2012 |
| scientific article | 537.9 | ||
| 34-36 | monoisotopic silicon, conduction electrons, electron spin resonance, spin relaxation, spin-orbit coupling, hyperfine interaction, electronic g-factor |
| The contribution of different mechanisms to spin relaxation processes of conduction electrons has been investigated.
Particular attention is paid to the mechanism associated with the hyperfine interaction (HFI) of the conduction
electrons with 29Si nuclei. The HFI contribution is found by measuring the conduction-electron spin resonance
linewidth in silicon crystals with different content of 29Si nuclei followed by its comparison with the theoretical estimations
made in the approximation of the Pershin-Privman model. Experimental determination of the HFI contribution
is complicated by the fact that it is defined on the background of effective mechanisms of spin relaxation of
conduction electrons in silicon associated with the electron spin-flip scattering on impurity and phonons. |
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