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Title of Article

STUDY OF LIGHT-POLARIZATION CHARACTERISTICS OF ELECTROLUMINESCENCE FROM LIGHT-EMITTING DIODES WITH AN InGaAs/GaAs QUANTUM WELL AND A DELTA <Mn>-DOPED LAYER IN THE GaAs BARRIER


Issue
3
Date
 2012

Article type
 scientific article
UDC
537.632
Pages
37-41
Keywords
ferromagnetic semiconductor; electroluminescence; circular polarization


Authors
Prokofeva Marina Mikhaylovna
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo, Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo, NOTs «Fizika tverdotelnykh nanostruktur» NNGU im. N.I. Lobachevskogo

Danilov Yuriy Aleksandrovich
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU im. N.I. Lobachevskogo, Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo, NOTs «Fizika tverdotelnykh nanostruktur» NNGU im. N.I. Lobachevskogo


Abstract
The results of investigations are presented on electroluminescence from light-emitting diodes based on InGaAs/GaAs heterostructures containing a delta-doped layer in the GaAs barrier. Indium content in the quantum well has been found to affect the temperature dependences of circular polarization. The highest temperature stability of circular polarization was observed for diodes with indium content of x=0.16–0.18 retaining a high value of the polarization degree up to 45 K.

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