INVESTIGATION OF PHOTOEXCITED CARRIER EMISSION FROM InAs/GaAs QUANTUM DOTS GROWN BY VAPOR PHASE EPITAXY |
| 4 | |
| 2012 |
| scientific article | 621.382 | ||
| 88-90 | photoelectric spectroscopy, quantum-size heteronanostructures, quantum dots, emission mechanisms, defect formation |
| Photoexcited carrier emission from InAs/GaAs quantum dots grown by vapor phase epitaxy and the influence on
the emission process of electric field, temperature and defect formation has been studied by photoelectric spectroscopy.
Main mechanisms of carrier emission have been shown to be thermally activated emission in low-intensity electric
fields and tunnel emission in strong electric fields. Defect formation as a result of helium ion bombardment of the
structure surface leads to the suppression of carrier emission from quantum dots due to the occurrence of the effective
recombination channel. |
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