Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

Title of Article

LUMINESCENCE OF GAN AND GAAS DIODES UNDER n-?-IRRADIATION

Issue	5
Date	2012

Article type		UDC	621.382:539.12.04
Pages	60-64	Keywords

Authors

Shukaylo Valeriy PavlovichRFYaTs–VNIITF im. akad. E.I. Zababakhina, Snezhinsk
Obolenskiy Sergey VladimirovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Basargina Natalya VitalevnaRFYaTs–VNIITF im. akad. E.I. Zababakhina, Snezhinsk
Vorozhtsova Irina ValerevnaRFYaTs–VNIITF im. akad. E.I. Zababakhina, Snezhinsk
Dubrovskikh Sergey MikhaylovichRFYaTs–VNIITF im. akad. E.I. Zababakhina, Snezhinsk
Tkachev Oleg ValerevichRFYaTs–VNIITF im. akad. E.I. Zababakhina, Snezhinsk

Abstract

Photo- and electroluminescence of GaN and GaAs light-emitting diodes have been studied at the time of n-?-radiation pulse. The action of ionizing radiation with an exposure dose of ~10

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