Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

ELECTRONIC STRUCTURE CALCULATIONS OF SILICON DIOXIDE MODIFIED WITH FLUORINE

Issue	1
Date	2013

Section

SOLID-STATE PHYSICS

Article type	scientific article	UDC	621.315.592
Pages	43-47	Keywords	: dielectric modification, ?-cristobalite, DFT calculations.

Authors

Guskova Olga PavlovnaNizhegorodskiy gosudarstvennyy tekhnicheskiy universitet im. R.E. Alekseeva; NII izmeritelnykh sistem im. Yu.E. Sedakova, N. Novgorod
Vorotyntsev Vladimir MikhaylovichNizhegorodskiy gosudarstvennyy tekhnicheskiy universitet im. R.E. Alekseeva
Faddeev Mikhail AndreevichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Shobolov Evgeniy LvovichNII izmeritelnykh sistem im. Yu.E. Sedakova, N. Novgorod
Abrosimova Natalya DmitrievnaNII izmeritelnykh sistem im. Yu.E. Sedakova, N. Novgorod

Abstract

The atomic and electronic structure of cristobalite (structural modification of silicon dioxide) with the periodic fluorine defect atom has been studied. Doping with fluorine is shown to lead to the formation of electronic states in the silicon dioxide forbidden zone.

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