Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

XPS COMPOSITION ANALYSIS OF SPINTRONIC HETERONANOSTRUCTURES BASED ON GAAS SEMICONDUCTORS WITH A GAMNAS SPIN INJECTION LAYER

Issue	1
Date	2013

Article type	scientific article	UDC	537.9 + 537.622 + 543.42 + 543.51
Pages	48-52	Keywords	X-ray photoelectron spectroscopy (XPS), chemical analysis, spintronics, heteronanostructures, chemical vapor deposition technique, gallium arsenide, manganese, mass spectroscopy

Authors

Nikolichev Dmitriy EvgenevichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Boryakov Aleksey VladimirovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Zubkov Sergey YurevichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Dorokhin Mikhail VladimirovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Kudrin Aleksey VladimirovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Zdoroveyschev Anton VladimirovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Drozdov Mikhail NikolaevichInstitut fiziki mikrostruktur RAN, N. Novgorod
Surodin Sergey IvanovichNizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Abstract

The XPS composition analysis is carried out of spintronic structures produced by combined techniques of CVD and laser sputtering on the basis of GaAs with a GaAsMn spin injection layer and an InGaAs quantum well. The profiles of element concentration distributions in the layers and at the heterointerfaces have been obtained. Diffusion processes of manganese and indium during the growth of heterostructures and their subsequent long exposure under normal conditions are characterized.

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