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Title of Article

EXAFLOP SIMULATION TOOLKIT FOR GROWTH PROCESSES AND PHYSICAL PROPERTIES OF SILICON NANOSTRUCTURES IN MODERN NANOINDUSTRY


Issue
5
Date
2012

Article type
scientific article
UDC
004.942, 004.272.26, 530.145
Pages
283-289
Keywords
 


Authors
Gergel Viktor Pavlovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Linev Aleksey Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Satanin Arkadiy Mikhaylovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Fedoseev Dmitriy Viktorovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Shvetsov Aleksandr Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
We discuss some problems of exaflop technology development for simulating growth processes and physical properties of giant atomic ensembles making up hybrid silicon nanoclusters based on silicon and gold, which are potentially promising in optoelectronic and biological applications. As an example, computational algorithms and programs are considered for the implementation of molecular dynamics methods and the Kohn-Sham method for systems of multi-electron silicon quantum dots.

File (in Russian)