NONLINEARITY AND HYSTERESIS IN THE LONGITUDINAL CURRENT TRANSPORT IN Ge:(Mn, Al)/GaAs LAYERS DEPOSITED FROM LASER PLASMA |
2 | |
2013 |
scientific article | 537.6 | ||
39-44 | electrotransport properties, diluted magnetic semiconductors, current-voltage characteristic, asymmetry, spin polarization, hysteresis, nonlinearity, compact magnetoresistive memory, ferromagnetic resonance, anomalous Hall effect. |
Electrotransport properties of Ge:(Mn, Al)/GaAs nanolayers deposited from laser plasma at a reduced temperature of 150°C have been studied along with those of the same samples after an additional 15-minute thermal vacuum annealing at 400°C. There has been found an asymmetry of the current-voltage characteristic (CVC) in the longitudinal current transport of such layers indicating spin polarized carriers, as well as significant nonlinearity and hysteresis up to 2% and 1%, respectively, both at room temperature and at 77K for relatively low current densities of 10 |
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