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Title of Article

NONLINEARITY AND HYSTERESIS IN THE LONGITUDINAL CURRENT TRANSPORT IN Ge:(Mn, Al)/GaAs LAYERS DEPOSITED FROM LASER PLASMA


Issue
2
Date
2013

Article type
scientific article
UDC
537.6
Pages
39-44
Keywords
electrotransport properties, diluted magnetic semiconductors, current-voltage characteristic, asymmetry, spin polarization, hysteresis, nonlinearity, compact magnetoresistive memory, ferromagnetic resonance, anomalous Hall effect.


Authors
Demidov Evgeniy Sergeevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Gusev Sergey Nikolaevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Karzanov Vadim Vyacheslavovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Sdobnyakov Viktor Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Budarin Leonid Igorevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Tronov Anton Aleksandrovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Podolskiy Vitaliy Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Lesnikov Valeriy Pavlovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Skopin Evgeniy Vladimirovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
Electrotransport properties of Ge:(Mn, Al)/GaAs nanolayers deposited from laser plasma at a reduced temperature of 150°C have been studied along with those of the same samples after an additional 15-minute thermal vacuum annealing at 400°C. There has been found an asymmetry of the current-voltage characteristic (CVC) in the longitudinal current transport of such layers indicating spin polarized carriers, as well as significant nonlinearity and hysteresis up to 2% and 1%, respectively, both at room temperature and at 77K for relatively low current densities of 10

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