ANALYTICAL MODEL FOR CHARACTERISTIC DEGRADATION OF SILICON THIN-BASE BIPOLAR TRANSISTORS EXPOSED TO DEFECT-INDUCING RADIATION |
| 2 | |
| 2013 |
| scientific article | 621.382.33 | ||
| 56-59 | thin-base bipolar transistor, ballistic transport of charge carriers, defect-inducing radiation. |
| An analytical model has been developed to describe degradation of static and small-signal characteristics of thin-base bipolar transistors. The impact of exposure to radiation and the ballistic limit on charge-carrier velocity has been taken into account. It has theoretically been shown that the degradation of the transistor static characteristics decreases with a decrease in the base thickness to less than 100 nm. |
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