The results are presented on the influence of pulsed gamma-neutron radiation on the output characteristics of a GaN-based HEMT (CGH40010, manufactured by Cree Inc. (USA)). The study of the output characteristic has been carried out directly at the moment of gamma-neutron radiation by the rapid method and some time later in greater detail under laboratory conditions. It has been found that unlike conventional built-in microwave transistors the changes in transistor bias voltage are not so much due to the changes in the concentration of electrically active donors, but to the accumulation of radiation-induced charges in the dielectric layers and on the borders of semiconductor layers. The latter is typical of silicon MIS transistors.
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