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Title of Article

THE INFLUENCE OF VAPOR PHASE EPITAXY GROWTH MODE OF InAs/GaAs QUANTUM DOTS ON THEIR OPTOELECTRONIC PROPERTIES


Issue
4
Date
 2013

Section
SOLID-STATE PHYSICS

Article type
 scientific article
UDC
621.382
Pages
33-37
Keywords
quantum dots, photoelectric spectroscopy, photoluminescence, temperature dependence of photosensitivity, non-equilibrium carrier escape.


Authors
Volkova Natalya Sergeevna
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Gorshkov Aleksey Pavlovich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Levichev Sergey Borisovich
Minho University, Braga, Portugal

Zdoroveyschev Anton Vladimirovich
NIFTI NNGU im. N.I. Lobachevskogo

Vikhrova Olga Viktorovna
NIFTI NNGU im. N.I. Lobachevskogo

Istomin Leonid Anatolevich
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
A comparative analysis of optoelectronic properties of InAs/GaAs quantum dots grown by atmospheric pressure organometallic vapor phase epitaxy in different growth modes has been carried out. It is shown that the growth-interruption mode permits to obtain quantum dots with an energy spectrum which is weakly sensitive to changes of GaAs cladding layer thickness and the presence of InGaAs quantum wells in it.

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