STRUCTURAL MODIFICATION OF SILICON ON SAPPHIRE |
| 4 | |
| 2013 |
| scientific article | 539.234, 537.533.35 | ||
| 38-41 | silicon on sapphire, molecular beam epitaxy, twinning defect, high-resolution transmission electron microscopy (HRTEM), wurtzite silicon. |
| The modification of diamond-like structures in nano-sized silicon on sapphire layers grown at low temperatures has been found using HRTEM technique. The appearance of inclusions with a structure different from that of diamond is related to the regions of intensive twinning and clusters of packing defects which form their own crystalline structure in the silicon lattice. The nanobeam electron diffraction (NBED) experiment has also shown that the silicon structure in these regions is modified as compared with the diamond-like one. A hypothesis is proposed concerning a hexagonal structure of the modified silicon phase inclusions on the basis of general theoretical ideas about defect formation in this material. |
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