Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

Issue	4
Date	2013

Article type	scientific article	UDC	539.216.2:538.975
Pages	42-55	Keywords	silicon carbide, ion implantation, structure, crystallization.

Authors

Beysembetov Iskander KalybekovichKazakhstansko-Britanskiy tekhnicheskiy universitet, Almaty, Kazakhstan
Nusupov Kair KhamzaevichKazakhstansko-Britanskiy tekhnicheskiy universitet, Almaty, Kazakhstan
Beysenkhanov Nurzhan BeysenkhanovichKazakhstansko-Britanskiy tekhnicheskiy universitet, Almaty, Kazakhstan
Zharikov Sagindyk KiyakbaevichKazakhstansko-Britanskiy tekhnicheskiy universitet, Almaty, Kazakhstan
Kenzhaliev Bagdaulet KenzhalievichKazakhstansko-Britanskiy tekhnicheskiy universitet, Almaty, Kazakhstan
Akhmetov Timur KarimovichKazakhstansko-Britanskiy tekhnicheskiy universitet, Almaty, Kazakhstan
Seitov Bekbolat ZhumanovichKazakhstansko-Britanskiy tekhnicheskiy universitet, Almaty, Kazakhstan

Abstract

Single-crystal Si wafers with (100), (111) orientations and electrical resistivity of 4–5 and 10 Ohm?cm, respectively, were implanted by

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