Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

INVESTIGATION OF OXYGEN ION DIFFUSION IN RESISTIVE SWITCHING MIM STRUCTURES BASED ON YTTRIA-STABILIZED ZIRCONIA

Issue	5
Date	2013

Article type	scientific article	UDC	539.219.3
Pages	51-54	Keywords	yttria-stabilized zirconia (YSZ), metal-insulator-metal (MIM) structure, forming, bipolar resistive switching, oxygen ion and vacancy diffusion.

Authors

Gorshkov O.N.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Antonov I.N.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Belov A.I.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Kasatkin A.P.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Tikhov S.V.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Shenina M.E.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Koryazhkina M.N.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Abstract

I-V curves of resistive switching MIM structures based on yttria-stabilized zirconia (YSZ) are investigated. By measuring I-V curves, the charges (associated with oxygen ion (vacancy) diffusion) arose in YSZ films which affected I-V characteristics. The analysis of I-V curves made it possible to estimate the oxygen vacancy diffusion coefficient.

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