The problem of defect formation in dislocation-free silicon single crystals during their growth and thermal annealing is presented. To solve it, the conjugate mathematical model is applied which includes possibilities of the thermal optimization for modern industrial furnaces of Czochralski silicon crystal growth, the control of thermal stress state and the defect formation during silicon ingot growth and thermal annealing of cutted wafers. Calculation methods for intrinsic point defect interaction and microdefect formation (microvoids and oxide particles) in solid oxygen solution of crystallized monocrystalline silicon have been developed and verified by experimental data. The study was carried out on the basis of an integrated mathematical model of Crystmo/Marc software code.
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