Вестник Нижегородского университета им. Н.И. Лобачевского. Серия: Социальные науки

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Title of Article

ADMITTANCE SPECTROSCOPY OF DEEP LEVELS IN p+-Si/ n-Si:Er/ n+-Si DIODES

Issue	2
Date	2013

Article type	scientific article	UDC	538.935
Pages	8-11	Keywords	erbium-doped silicon, sublimation molecular beam epitaxy (SMBE), admittance spectroscopy, deep levels

Authors

Filatov D.O.NIFTI NNGU im. N.I. Lobachevskogo
Zimovets I.A.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Mishkin V.P.Institut fiziki i khimii Mordovskogo gosuniversiteta im. N.P. Ogareva
Chugrov I.A.Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo
Alyabina N.A.NIFTI NNGU im. N.I. Lobachevskogo
Kornaukhov A.V.NIFTI NNGU im. N.I. Lobachevskogo
Kuznetsov V.P.NIFTI NNGU im. N.I. Lobachevskogo

Abstract

The deep level spectrum in the Si:Er active layers of the LEDs based on the SMBE grown p +-Si/ n -Si:Er/ n +-Si struc- tures has been studied by admittance spectroscopy. The ionization energies, the electron capture cross-sections, and the concentrations of the Er-related deep levels have been determined.

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