INVESTIGATION OF RESISTIVE SWITCHING IN HfO2/Si THIN FILMS BY COMBINED STM/AFM |
| 2 | |
| 2013 |
| scientific article | 538.935 | ||
| 17-21 | resistive switching, hafnium dioxide, scanning tunneling microscopy (STM), tunneling atomic force mi- croscopy (tunneling AFM), oxygen vacancy migration |
| Resistive switching in ultrathin (?4nm) HfO2/Si films annealed in ultra high vacuum (UHV) has been studied by UHV tunneling AFM. A possibility of a reversible local modification of the HfO2 film electrical conductivity has been demonstrated experimentally by applying a bias voltage between a conductive AFM probe tip and a silicon substrate. The current-voltage curves of the contact of the AFM probe tip to the HfO2 film on the Si substrate demonstrate a clear hysteresis of a bipolar type of switching related to the drift of oxygen vacancies (generated during UHV annealing) in the electric field between the tip and the substrate. |
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