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Title of Article

PHOTOCONDUCTIVITY OF GaAs NANOWIRES


Issue
2
Date
 2013

Article type
 scientific article
UDC
538.935
Pages
22-27
Keywords
nanowires, GaAs, photoconductivity, surface recombination


Authors
Alekseev P.A.
Sankt-Peterburgskiy gosudarstvennyy elektrotekhnicheskiy universitet «LETI»

Dunaevskiy M.S.
Fiziko-tekhnicheskiy institut im. A.F. Ioffe RAN, Sankt-Peterburg

Marychev M.O.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Nezhdanov A.V.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Lepsa M.
Peter Gr?nberg Institut (PGI-9), Forschungszentrum J?lich GmbH

Gr?tzmacher D.
Peter Gr?nberg Institut (PGI-9), Forschungszentrum J?lich GmbH

Titkov A.N.
Fiziko-tekhnicheskiy institut im. A.F. Ioffe RAN, Sankt-Peterburg


Abstract
The photoconductivity (PC) spectra of individual GaAs nanowires (NWs) on SiO2/Si substrates have been studied as well as the NW PC dependence on the pumping intensity and the effect of a SiOx coating on the PC spectra. The PC of heavily doped GaAs NWs has been shown to have a barrier nature while the PC of depleted NWs is governed by the surface recombination velocity. The effect of the NW PC modulation by the surface photovoltage in the SiO2/Si substrate has been observed at the photoexcitation in the Si self-absorption region.

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