The morphology and PL spectra of self-assembled GeSi/Si(001) nanoislands grown by the hot wire method have been studied for the first time. Nanoisland size and density dependencies on the substrate temperature and the deposited amount of Ge have been found to correspond to those found earlier for the nanoislands grown by MBE. However, the nanoislands tended to coalesce in the whole growth temperature range (500 ? 700?С). This was related to the presence of GeH4 inside the growth chamber, which enhances the surface diffusion of Ge adatoms and, therefore, promotes the islands coalescence. The PL (77K) spectra show dominant lines related to misfit dislocations in the coalesced islands.
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