ELECTRON SPECTROSCOPY DIAGNOSTICS OF CHEMICAL AND PHASE COMPOSITION OF THIN FILM STRUCTURES WITH SILICON NANOCRYSTALS IN ZrO2 MATRIX |
| 2 | |
| 2013 |
| scientific article | 537.9 + 539.534.9 + 543.42 | ||
| 52-57 | silicon, nanocrystal, zirconia (zirconium dioxide), electron spectroscopy, chemical analysis, ion beam syn- thesis (IBS) |
| A chemical analysis of zirconia films irradiated with silicon ions (dose 2?1017 см-2) and annealed at 1100 С in nitrogen atmosphere has been carried out using X-ray photoelectron spectroscopy and ion-plasma profiling. A phase depth distri- bution profile has been obtained. Zirconium silicides and silicates have been found. The Si content in zirconia films did not exceed 2 atomic percent in the experiment, which is an order below the value expected from the implantation dose. The reduction in the Si element concentration is explained by the formation of zirconium silicates and/or silicides during the silicon dioxide annealing, which results in the deterioration of the system luminescent properties observed earlier. |
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