SiCAND Si3N4-BASED MATERIALS OBTAINED BY SPARK PLASMA SINTERING |
| 2 | |
| 2013 |
| scientific article | 666.31 | ||
| 107-114 | spark plasma sintering (SPS), liquid-phase sintering pressureless (LPSSiC), silicon carbide, silicon nitride |
| High-density silicon carbide-based and silicon nitride-based materials (? ? 98.0 %) are obtained by the SPS method with high mechanical properties: ? = 450 MPa, K1C = 5.2 MPa m1/2, HV = 20.8 GPa (for SiC-based materials); ? = 850 MPa, K1C = 6.5 MPa m1/2; HV = 14.8 GPa (for Si3N4-based materials). SPS sintering temperatures are 150?C lower for SiC-based materials and 200?C lower for Si3N4-based materials as compared with materials sintered without pressure. |
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