FEM SIMULATION OF FBAR RESONATORS |
1 | |
2014 |
scientific article | 681.586.773:543.43 | ||
63-68 | acoustoelectronics, acoustic waves, resonators, piezocrystals |
The article presents a numerical computation technique to calculate acoustoelectronic single-frequency HF thin- film resonators based on the numerical solution of 3D piezoacoustic equations by the finite element method (FEM). The frequency dependence of FBAR admittance has been obtained. The FEM simulation results are compared with those obtained using 1D Nowotny-Benes model. |
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