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Title of Article

FEM SIMULATION OF FBAR RESONATORS


Issue
1
Date
2014

Article type
scientific article
UDC
681.586.773:543.43
Pages
63-68
Keywords
acoustoelectronics, acoustic waves, resonators, piezocrystals


Authors
Bosov S.I.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Dvoesherstov M.Yu.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Leontev N.V.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
The article presents a numerical computation technique to calculate acoustoelectronic single-frequency HF thin- film resonators based on the numerical solution of 3D piezoacoustic equations by the finite element method (FEM). The frequency dependence of FBAR admittance has been obtained. The FEM simulation results are compared with those obtained using 1D Nowotny-Benes model.

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