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Title of Article

THICKNESS UNIFORMITY CALCULATION OF EPITAXIAL LAYERS OBTAINED BY SUBLIMATION-SOURCE MOLECULAR BEAM EPITAXY


Issue
 
Date

Article type
 scientific article
UDC
538.9
Pages
72-74
Keywords
 


Authors
R‘RѕR»RґS‹SЂRµRІSЃRєReR№ Rџ.R‘.
RќReR¶RµRіRѕSЂRѕRґSЃRєReR№ RіRѕSЃSѓRЅReRІRµSЂSЃReS‚RµS‚ ReRј. Rќ.R?. R›RѕR±R°S‡RµRІSЃRєRѕRіRѕ

RљRѕSЂRѕRІReRЅ Rђ.R“.
RќReR¶RµRіRѕSЂRѕRґSЃRєReR№ RіRѕSЃSѓRЅReRІRµSЂSЃReS‚RµS‚ ReRј. Rќ.R?. R›RѕR±R°S‡RµRІSЃRєRѕRіRѕ

R”RµRЅReSЃRѕRІ RЎ.Rђ.
RќR°SѓS‡RЅRѕ-ReSЃSЃR»RµRґRѕRІR°S‚RµR»SЊSЃRєReR№ S„ReR·ReRєRѕ-S‚RµS…RЅReS‡RµSЃRєReR№ ReRЅSЃS‚ReS‚SѓS‚ RќReR¶RµRіRѕSЂRѕRґSЃRєRѕRіRѕ RіRѕSЃSѓRЅReRІRµSЂSЃReS‚RµS‚R° ReRј. Rќ.R?. R›RѕR±R°S‡RµRІSЃRєRѕRіRѕ

RЎRІRµS‚R»RѕRІ RЎ.Rџ.
RќR°SѓS‡RЅRѕ-ReSЃSЃR»RµRґRѕRІR°S‚RµR»SЊSЃRєReR№ S„ReR·ReRєRѕ-S‚RµS…RЅReS‡RµSЃRєReR№ ReRЅSЃS‚ReS‚SѓS‚ RќReR¶RµRіRѕSЂRѕRґSЃRєRѕRіRѕ RіRѕSЃSѓRЅReRІRµSЂSЃReS‚RµS‚R° ReRј. Rќ.R?. R›RѕR±R°S‡RµRІSЃRєRѕRіRѕ

RERµRЅRіSѓSЂRѕRІ R’.R“.
RќR°SѓS‡RЅRѕ-ReSЃSЃR»RµRґRѕRІR°S‚RµR»SЊSЃRєReR№ S„ReR·ReRєRѕ-S‚RµS…RЅReS‡RµSЃRєReR№ ReRЅSЃS‚ReS‚SѓS‚ RќReR¶RµRіRѕSЂRѕRґSЃRєRѕRіRѕ RіRѕSЃSѓRЅReRІRµSЂSЃReS‚RµS‚R° ReRј. Rќ.R?. R›RѕR±R°S‡RµRІSЃRєRѕRіRѕ


Abstract
Model calculations have been carried out of the epitaxial layer thickness distribution over the substrate area for a molecular beam formed by a vacuum sublimation source. The calculated results are in good agreement with the experimental data on silicon molecular beam epitaxy.

File (in Russian)

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