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Title of Article

PERIODIC Si/SiGe HETEROSTRUCTURES GROWN ON Si(100) FROM Si ATOMIC FLUX AND GeH 4 MOLECULAR FLOW


Issue
1
Date
 2014

Article type
 scientific article
UDC
533.376
Pages
84-87
Keywords
semiconductors, silicon-germanium, molecular beam epitaxy (MBE), silicon substrate, periodic heterostructures


Authors
Matveev S.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Denisov S.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Chalkov V.Yu.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Shengurov V.G.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Stepikhova M.V.
Institut fiziki mikrostruktur RAN, N. Novgorod

Drozdov M.N.
Institut fiziki mikrostruktur RAN, N. Novgorod

Yunin P.A.
Institut fiziki mikrostruktur RAN, N. Novgorod

Zakharov N.D.
Max-Planck-Institut f?r Mikrostrukturphysik, Halle (Saale), Germany


Abstract
Si/SiGe periodic heterostructures are grown on Si(100) substrates by combined method of heteroepitaxy from the Si atomic flux and GeH 4 molecular flow. The structures have been studied by X-ray diffraction, secondary ion mass spectroscopy and transmission electron microscopy. The data obtained indicate a high structural perfection of the structures, sharp interfaces between the layers, repeatability of thickness and composition of the layers in periodic structures.

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