ANALYTICAL MODEL OF ELECTRON GAS HEATING IN A THIN BASE OF A BIPOLAR TRANSISTOR BASED ON Ge, Si AND GaAs EXPOSED TO A STATIONARY HIGH-ENERGY QUANTUM FLOW |
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| 2014 |
| scientific article | 621.382.33 | ||
| 88-93 | thin-base bipolar transistor, ballistic charge-carrier transport, electron-hole gas heating, ionizing radiation |
| An analytical model has been proposed to describe electron gas heating in a thin base of a bipolar transistor exposed to a stationary high-energy quantum flow. It has been theoretically shown that the dependence of the electron gas average energy at the boundary of the collector junction space charge and the neutral region of the thin base on the base thickness can have a monotonic and non-monotonic character. This character is uniquely defined by the combination of the applied voltage to the transistor emitter junction and the rate of hot radiation-generated charge carriers. |
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