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Title of Article

ELECTROLUMINESCENCE CIRCULAR POLARIZATION OF LIGHT-EMITTING DIODES BASED ON GaAs<Mn>


Issue
1
Date
 2014

Article type
 scientific article
UDC
537.632, 537.622.4
Pages
94-99
Keywords
 spintronics, spin light-emitting diodes, ferromagnetic semiconductors


Authors
Rykov A.V.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo

Dorokhin M.V.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo; Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU

Malysheva E.I.
Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU

Danilov Yu.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo; Nauchno-issledovatelskiy fiziko-tekhnicheskiy institut NNGU


Abstract
The temperature dependences of electroluminescence (EL) circular polarization degree of the light-emitting diodes based on InGaAs/GaAs heterostructures and delta-doped with a Mn layer have been studied. Mn delta-doping provides EL circular polarization due to the exchange interaction between Mn ions and holes in the quantum well. The dependences obtained are used to determine the Curie temperature of the ferromagnetic layer and they are compared with the theory of disordered ferromagnets.

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