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Title of Article

SIMULATION OF HEMT RADIATION HARDNESS (a review)


Issue
1
Date
2014

Article type
scientific article
UDC
621.382.33
Pages
100-115
Keywords
HEMT, radiation hardness, heteronanostructures InGaAs/InAlAs, GaAlAs/InGaAs, GaN/GaAlN


Authors
Tarasova E.A.
Nizhegorodskiy gosuniversitet im. N.I. Lobachevskogo


Abstract
The article presents an overview of simulation and modeling of radiation effects on heterostructures and field-effect transistors with a two-dimensional electron gas (HEMT). Dominant factors that degrade the characteristics of heterostructures and transistors based on them are identified.

File (in Russian)