SIMULATION OF HEMT RADIATION HARDNESS (a review) |
1 | |
2014 |
scientific article | 621.382.33 | ||
100-115 | HEMT, radiation hardness, heteronanostructures InGaAs/InAlAs, GaAlAs/InGaAs, GaN/GaAlN |
The article presents an overview of simulation and modeling of radiation effects on heterostructures and field-effect transistors with a two-dimensional electron gas (HEMT). Dominant factors that degrade the characteristics of heterostructures and transistors based on them are identified. |